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PD - 93962
IRFP3415
HEXFET(R) Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V
G S
RDS(on) = 0.042 ID = 43A
Description
Fifth Generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. HEXFET(R)
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
43 30 150 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.75 --- 62
Units
C/W
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1
8/16/00
IRFP3415
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Q gd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions 150 --- --- V VGS = 0V, ID = 250A --- 0.17 --- V/C Reference to 25C, ID = 1mA --- --- 0.042 VGS = 10V, ID = 22A 2.0 --- 4.0 V VDS = VGS, ID = 250A 19 --- --- S VDS = 50V, ID = 22A --- --- 25 VDS = 150V, VGS = 0V A --- --- 250 VDS = 120V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 200 ID = 22A --- --- 17 nC VDS = 120V --- --- 98 VGS = 10V, See Fig. 6 and 13 --- 12 --- VDD = 75V --- 55 --- ID = 22A ns --- 71 --- RG = 2.5 --- 69 --- RD = 3.3, See Fig. 10 D Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- 7.5 --- and center of die contact S --- 2400 --- VGS = 0V --- 640 --- pF VDS = 25V --- 340 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 260 2.2 43 A 150 1.3 390 3.3 V ns C
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 22A, di/dt 820A/s, VDD V(BR)DSS,
TJ 175C
VDD = 25V, starting TJ = 25C, L = 2.4mH
RG = 25, IAS = 22A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRFP3415
1000
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V TOP
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
20us PULSE WIDTH T = 25 C
J
o
4.5V
20us PULSE WIDTH T = 175 C
J
o
10 1
10 1
10
100
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
ID = 37A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
2.0
TJ = 25 C TJ = 175 C
100
1.5
1.0
0.5
10 4 5 6 7
V DS = 50V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( oC)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP3415
6000
5000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 22A
16
VDS = 120V VDS = 75V VDS = 30V
C, Capacitance (pF)
4000
Ciss
3000
12
2000
C oss C rss
8
1000
4
0 1 10 100
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
I D , Drain Current (A)
100
TJ = 175 o C
10
100
10us
100us
10
TJ = 25 o C
1
1ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1
TC = 25 o C TJ = 175 o C Single Pulse
1 10 100
10ms
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP3415
50
VDS VGS
RD
40
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
30
10V
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP3415
1400
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
1200
1000
TOP BOTTOM ID 9.0A 16A 22A
VDS
L
D R IV E R
800
RG
20V tp
D .U .T
IA S
+ V - DD
600
A
0 .0 1
400
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150 175
V (B R )D SS tp
Starting TJ , Junction Temperature (oC)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP3415
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFP3415
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
1 5.90 (.62 6) 1 5.30 (.60 2) -B-
3.65 (.1 43) 3.55 (.1 40) 0.25 (.0 10) M -A5 .50 (.217) DBM
-D5 .30 (.209 ) 4 .70 (.185 ) 2.5 0 (.08 9) 1.5 0 (.05 9) 4
20 .30 (.800) 19 .70 (.775) 1 2 3
2X
5.50 (.21 7) 4.50 (.17 7)
N O TES : 1 DIM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 1 98 2. 2 CO N TR O LL IN G DIM EN S IO N : IN CH . 3 CO N F O RM S TO JED E C O U TLINE TO -2 47 -A C .
-C14.8 0 (.5 83) 14.2 0 (.5 59) 4.3 0 (.1 70) 3.7 0 (.1 45)
2.40 (.09 4) 2.00 (.07 9) 2X 5.45 (.2 15) 2X
1.4 0 (.0 56) 3 X 1.0 0 (.0 39) 0.2 5 (.0 10) M 3 .40 (.133 ) 3 .00 (.118 ) C AS
0.80 (.03 1) 3X 0.40 (.01 6) 2.60 (.1 02) 2.20 (.0 87)
L EA D A S SIG N M E N TS 1 2 3 4 G A TE D R AIN S O UR C E D R AIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00
8
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